Epitaxial quantum dots formed by III–V compound semiconductors are excellent sources of non-classical photons, creating single photons and entangled multi-photon states on demand. Their semiconductor nature allows for a straightforward combination with mature integrated photonic technologies, leading to novel functional devices at the single-photon level. Integrating a quantum dot into a carefully engineered photonic cavity enables control of the radiative decay rate using the Purcell effect and the realization of photon–photon nonlinear gates. In this review, we introduce the basis of epitaxial quantum dots and discuss their applications as non-classical light sources. We highlight two interfaces—one between flying photons and the quantum-dot dipole, and the other between the photons and the spin. We summarize the recent development of integrated photonics and reconfigurable devices that have been combined with quantum dots or are suitable for hybrid integration. Finally, we provide an outlook of employing quantum-dot platforms for practical applications in large-scale quantum computation and the quantum Internet.

The optical coupled resonant system consisting of an integrated resonator with gain and a resonator with loss provides an excellent platform to create exceptional points (EPs) in non-Hermitian systems. Most previous studies have focused on the striking intensity feature of EPs, but its phase response is seldom investigated. In this work, we present a thorough study on the phase response of an EP system. Intriguingly, the phase response exhibits distinct behavior depending on the ordering of the ring resonators: when the input light in a bus waveguide is coupled directly or indirectly to the ring with a gain, the phase response is featured by nonmonotonic transition and 2π monotonic transition, respectively. We also prove that the newly identified phase features are theoretically guaranteed. These phase responses produce unique group delays that have never been found in other coupled resonant systems. The results deepen our understanding on EPs in non-Hermitian systems and are potentially useful for practical applications exploiting phase features.

掺镱光纤是高功率激光器的核心材料，但在高能射线辐照后其应用性能会显著下降，因此有必要对掺镱光纤材料在辐照环境下的性能变化进行深入研究。采用改进型化学气相沉积法结合稀土螯合物掺杂制备了系列光纤预制棒及光纤，测试了光纤在不同剂量下射线辐照前后的高功率输出性能，以及光纤预制棒辐照前后的吸收光谱及镱离子荧光寿命。结果表明：小剂量辐照后掺镱光纤的高功率输出显著下降，通过预制棒吸收光谱可看出主要是因为伽马辐照后使掺镱光纤材料中Al的相关缺陷浓度增多，在可见光区域吸收损耗增加。Ce离子的掺杂通过缓减辐致铝氧空位中心（Al-OHC）色心缺陷的增加，减少Yb离子荧光寿命的下降，可在一定程度上抑制高功率掺镱光纤的辐致暗化。